Low temperature spark plasma sintering of tin oxide doped with tantalum oxide
نویسندگان
چکیده
منابع مشابه
Spark Plasma Sintering of Ultra-High Temperature Tantalum/Hafnium Carbides Composite
TaC and HfC are thought to have the highest melting point (~4000°C) among all refractory materials. The binary solid solution of TaC and HfC (Ta4HfC5) is also considered as the most refractory material with the melting point over 4000 °C and valuable physical and mechanical properties. The main goal of this work is to fabricate TaC/HfCbased composites which consolidated by means of spark plasma...
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Atomic layer deposition (ALD) of tin oxide (SnOx) films was achieved using a newly synthesized tin precursor and hydrogen peroxide. We obtained highly pure, conductive SnOx films at temperatures as low as 50 C, which was possible because of high chemical reactivity between the new Sn precursor and hydrogen peroxide. The growth per cycle is around 0.18 nm/cycle in the ALDwindow up to 150 C, and ...
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Highly uniform oxide dispersion-strengthened materials W-1 wt % Nd₂O₃ and W-1 wt % CeO₂ were successfully fabricated via a novel wet chemical method followed by hydrogen reduction. The powders were consolidated by spark plasma sintering at 1700 °C to suppress grain growth. The samples were characterized by performing field emission scanning electron microscopy and transmission electron microsco...
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ژورنال
عنوان ژورنال: Journal of the Ceramic Society of Japan
سال: 2016
ISSN: 1348-6535,1882-0743
DOI: 10.2109/jcersj2.16133